All MOSFET. MSU12N60T Datasheet

 

MSU12N60T Datasheet and Replacement


   Type Designator: MSU12N60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

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MSU12N60T Datasheet (PDF)

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MSU12N60T

600V/12A POWER MOSFET (N-Channel) MSU12N60 600V/12A Power MOSFET (N-Channel) General Description MSU12N60 is a N-Channel enhancement mode power MOSFET with advanced technology. It is designed to have Better characteristics, such as fast switching time, low gate TO-220 TO-220F charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and

Datasheet: MSQ7434N , MSQ94P33 , MSQ99N26 , MSS34N40 , MSS5P05D , MSS5P05U , MSU11N50Q , MSU12N60F , AO3407 , MSU18N40 , MSU1N60T , MSU1N60F , MSU1N60D , MSU1N60U , MSU2N60T , MSU2N60F , MSU2N60D .

History: STB21NM60N | AONS66613 | STB21NM50N-1 | SPU04N60C3 | FQD24N08TF | AOTF380A60CL | 2N60L-TM3-T

Keywords - MSU12N60T MOSFET datasheet

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