MSU4N60S Datasheet and Replacement
Type Designator: MSU4N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251
MSU4N60S substitution
MSU4N60S Datasheet (PDF)
msu4n60 s.pdf

Preliminary MSU4N60_S 600V N-Channel MOSFET Description The MSU4N60_S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design V
msu4n60.pdf

MSU4N60 600V N-Channel MOSFET Description The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme
msu4n65.pdf

MSU4N65 650V N-Channel MOSFET Description The MSU4N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design 100% EAS Test
Datasheet: MSU2N60F , MSU2N60D , MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 , MMIS60R580P , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q .
History: MMF80R900PCTH
Keywords - MSU4N60S MOSFET datasheet
MSU4N60S cross reference
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History: MMF80R900PCTH



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