MSU4N60S Datasheet. Specs and Replacement

Type Designator: MSU4N60S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251

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MSU4N60S datasheet

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MSU4N60S

Preliminary MSU4N60_S 600V N-Channel MOSFET Description The MSU4N60_S is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design V... See More ⇒

 7.2. Size:694K  bruckewell
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MSU4N60S

MSU4N60 600V N-Channel MOSFET Description The MSU4N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requireme... See More ⇒

 8.1. Size:707K  bruckewell
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MSU4N60S

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Detailed specifications: MSU2N60F, MSU2N60D, MSU2N60U, MSU2N60S, MSU2N70, MSU4D5N50Q, MSU4N40, MSU4N60, 7N60, MSU4N65, MSU5N50, MSU5N60T, MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, MSU8N50Q

Keywords - MSU4N60S MOSFET specs

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