All MOSFET. MSU5N50 Datasheet

 

MSU5N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSU5N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO-251

 MSU5N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSU5N50 Datasheet (PDF)

 ..1. Size:595K  bruckewell
 msu5n50.pdf

MSU5N50 MSU5N50

MSU5N50 500V N-Channel MOSFET Description The MSU5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design Rugged Gate Oxide

 9.1. Size:475K  taitron
 msu5n60.pdf

MSU5N50 MSU5N50

600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

Datasheet: MSU2N60U , MSU2N60S , MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 , MSU4N60S , MSU4N65 , SPW47N60C3 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 .

 

 
Back to Top