All MOSFET. MSU5N60F Datasheet

 

MSU5N60F Datasheet and Replacement


   Type Designator: MSU5N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F
 

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MSU5N60F Datasheet (PDF)

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MSU5N60F

600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

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MSU5N60F

MSU5N50 500V N-Channel MOSFET Description The MSU5N50 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-251 package is universally preferred for all commercial-industrial applications Features Originative New Design Rugged Gate Oxide

Datasheet: MSU2N70 , MSU4D5N50Q , MSU4N40 , MSU4N60 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , 60N06 , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 .

History: IPG20N06S4L-26A | MSU5N60T | STD12NF06L | IRFHM8326 | IPD60R600P7S | CS6N60FA9H | FDPF33N25TRDTU

Keywords - MSU5N60F MOSFET datasheet

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