MSU7N60F Datasheet and Replacement
Type Designator: MSU7N60F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
MSU7N60F substitution
MSU7N60F Datasheet (PDF)
msu7n60f msu7n60t.pdf

600V/7.4A POWER MOSFET (N-Channel) MSU7N60 600V/7.4A Power MOSFET (N-Channel) General Description MSU7N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati
Datasheet: MSU4N40 , MSU4N60 , MSU4N60S , MSU4N65 , MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , 8N60 , MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 .
History: BSS138E | IRFH5302DPBF
Keywords - MSU7N60F MOSFET datasheet
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History: BSS138E | IRFH5302DPBF



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