All MOSFET. IRFS644A Datasheet

 

IRFS644A Datasheet and Replacement


   Type Designator: IRFS644A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220F
 

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IRFS644A Datasheet (PDF)

 ..1. Size:504K  samsung
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IRFS644A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 7.1. Size:309K  1
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IRFS644A

 7.2. Size:276K  1
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IRFS644A

 7.3. Size:898K  fairchild semi
 irfs644b.pdf pdf_icon

IRFS644A

November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to

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Datasheet: IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRFS642 , IRFS644 , 13N50 , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A , IRFS721 , IRFS722 .

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