IRFS644A
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS644A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 43
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 180
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO220F
IRFS644A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS644A
Datasheet (PDF)
..1. Size:504K samsung
irfs644a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
7.3. Size:898K fairchild semi
irfs644b.pdf
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
7.4. Size:900K fairchild semi
irf644b irfs644b.pdf
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
Datasheet: IRFS632
, IRFS634
, IRFS634A
, IRFS635
, IRFS640
, IRFS640A
, IRFS642
, IRFS644
, 7N60
, IRFS645
, IRFS650A
, IRFS654A
, IRFS710A
, IRFS720
, IRFS720A
, IRFS721
, IRFS722
.