IRFS644A PDF and Equivalents Search

 

IRFS644A Specs and Replacement

Type Designator: IRFS644A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

IRFS644A substitution

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IRFS644A datasheet

 ..1. Size:504K  samsung
 irfs644a.pdf pdf_icon

IRFS644A

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.214 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

 7.1. Size:309K  1
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IRFS644A

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 7.2. Size:276K  1
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IRFS644A

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 7.3. Size:898K  fairchild semi
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IRFS644A

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Detailed specifications: IRFS632 , IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRFS642 , IRFS644 , 4N60 , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A , IRFS721 , IRFS722 .

History: IRFS9141

Keywords - IRFS644A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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