All MOSFET. MSW10N80 Datasheet

 

MSW10N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MSW10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 240 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
   Maximum Drain Current |Id|: 10 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 58 nC
   Rise Time (tr): 150 nS
   Drain-Source Capacitance (Cd): 230 pF
   Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
   Package: TO-3P TO-247

 MSW10N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MSW10N80 Datasheet (PDF)

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 msw10n80.pdf

MSW10N80 MSW10N80

Preliminary MSW10N80 800V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (typ 0.65 )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ru

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