MSW10N80 Datasheet. Specs and Replacement

Type Designator: MSW10N80  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 240 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-3P TO-247

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MSW10N80 datasheet

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MSW10N80

Preliminary MSW10N80 800V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (typ 0.65 )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ru... See More ⇒

Detailed specifications: MSU5N50, MSU5N60T, MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, MSU8N50Q, MSU9N90P, RU7088R, MSW11N90, MSW16N50, MSW20N50, MSW20N60, MSW9N90, MTA090N02KC3, MTA340N02KC3, MTA55N20J3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.