All MOSFET. MSW10N80 Datasheet

 

MSW10N80 Datasheet and Replacement


   Type Designator: MSW10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 150 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO-3P TO-247
 

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MSW10N80 Datasheet (PDF)

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MSW10N80

Preliminary MSW10N80 800V N-Channel MOSFET Description This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features RDS(on) (typ 0.65 )@VGS=10V Gate Charge (Typical 55nC) Improved dv/dt Capability, High Ru

Datasheet: MSU5N50 , MSU5N60T , MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P , MMD60R360PRH , MSW11N90 , MSW16N50 , MSW20N50 , MSW20N60 , MSW9N90 , MTA090N02KC3 , MTA340N02KC3 , MTA55N20J3 .

History: NTMS4177PR | RJK0214DPA | FDC645NF095 | WMK043N10HGS | FDMC86248

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