MSW11N90 Datasheet. Specs and Replacement

Type Designator: MSW11N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-247

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MSW11N90 datasheet

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MSW11N90

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Detailed specifications: MSU5N60T, MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, MSU8N50Q, MSU9N90P, MSW10N80, MMIS60R580P, MSW16N50, MSW20N50, MSW20N60, MSW9N90, MTA090N02KC3, MTA340N02KC3, MTA55N20J3, MTB070P15J3

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