MSW16N50 Datasheet and Replacement
Type Designator: MSW16N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-3P TO-247
MSW16N50 substitution
MSW16N50 Datasheet (PDF)
msw16n50.pdf

MSW16N50 500V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics
Datasheet: MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , HY1906P , MSW20N50 , MSW20N60 , MSW9N90 , MTA090N02KC3 , MTA340N02KC3 , MTA55N20J3 , MTB070P15J3 , MTB080N15J3 .
History: CJ2302S
Keywords - MSW16N50 MOSFET datasheet
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MSW16N50 lookup
MSW16N50 substitution
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History: CJ2302S



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