MSW16N50 Datasheet. Specs and Replacement

Type Designator: MSW16N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-3P TO-247

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MSW16N50 datasheet

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MSW16N50

MSW16N50 500V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics ... See More ⇒

Detailed specifications: MSU5N60F, MSU5N60D, MSU7N60F, MSU7N60T, MSU8N50Q, MSU9N90P, MSW10N80, MSW11N90, AOD4184A, MSW20N50, MSW20N60, MSW9N90, MTA090N02KC3, MTA340N02KC3, MTA55N20J3, MTB070P15J3, MTB080N15J3

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