All MOSFET. MSW16N50 Datasheet

 

MSW16N50 Datasheet and Replacement


   Type Designator: MSW16N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 205 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-3P TO-247
 

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MSW16N50 Datasheet (PDF)

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MSW16N50

MSW16N50 500V N-Channel MOSFET Description TO-247 This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies. Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics

Datasheet: MSU5N60F , MSU5N60D , MSU7N60F , MSU7N60T , MSU8N50Q , MSU9N90P , MSW10N80 , MSW11N90 , HY1906P , MSW20N50 , MSW20N60 , MSW9N90 , MTA090N02KC3 , MTA340N02KC3 , MTA55N20J3 , MTB070P15J3 , MTB080N15J3 .

History: IRFSL7762 | STL140N6F7 | IRF7101TR | FQPF12N60 | OSG50R500AF

Keywords - MSW16N50 MOSFET datasheet

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