All MOSFET. IRFS645 Datasheet

 

IRFS645 Datasheet and Replacement


   Type Designator: IRFS645
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 39 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO220F
 

 IRFS645 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFS645 Datasheet (PDF)

 ..1. Size:309K  1
 irfs644 irfs645.pdf pdf_icon

IRFS645

 8.1. Size:301K  1
 irfs640 irfs641.pdf pdf_icon

IRFS645

 8.2. Size:276K  1
 irfs644.pdf pdf_icon

IRFS645

 8.3. Size:916K  fairchild semi
 irf640b irfs640b.pdf pdf_icon

IRFS645

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - IRFS645 MOSFET datasheet

 IRFS645 cross reference
 IRFS645 equivalent finder
 IRFS645 lookup
 IRFS645 substitution
 IRFS645 replacement

 

 
Back to Top

 


 
.