All MOSFET. IRFS645 Datasheet

 

IRFS645 Datasheet and Replacement


   Type Designator: IRFS645
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 39 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO220F
 

 IRFS645 substitution

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IRFS645 Datasheet (PDF)

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IRFS645

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IRFS645

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IRFS645

 8.3. Size:916K  fairchild semi
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IRFS645

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

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Datasheet: IRFS634 , IRFS634A , IRFS635 , IRFS640 , IRFS640A , IRFS642 , IRFS644 , IRFS644A , IRFP250 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , IRFS720A , IRFS721 , IRFS722 , IRFS723 .

Keywords - IRFS645 MOSFET datasheet

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