All MOSFET. MTB080N15J3 Datasheet

 

MTB080N15J3 Datasheet and Replacement


   Type Designator: MTB080N15J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 20.6 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: TO-252
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MTB080N15J3 Datasheet (PDF)

 ..1. Size:371K  cystek
 mtb080n15j3.pdf pdf_icon

MTB080N15J3

Spec. No. : C987J3 Issued Date : 2015.02.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150VMTB080N15J3 ID @VGS=10V, TC=25C 18A RDS(ON)@VGS=10V, ID=10A 82.3m(typ) RDS(ON)@VGS=4.5V, ID=10A 85.8m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free pack

 9.1. Size:363K  cystek
 mtb08n04j3.pdf pdf_icon

MTB080N15J3

Spec. No. : C892J3 Issued Date : 2014.05.29 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB08N04J3 ID @VGS=10V 60ARDS(ON)@VGS=10V, ID=15A 5.4m(typ) RDS(ON)@VGS=5V, ID=10A 9.0m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: ME4565 | IRLU9343PBF | 2SK3437 | SL4409N | ECH8305 | VST012N06MS | 15NM70L-TF34-T

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