MTB080N15J3 Datasheet. Specs and Replacement

Type Designator: MTB080N15J3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.6 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm

Package: TO-252

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MTB080N15J3 datasheet

 ..1. Size:371K  cystek
 mtb080n15j3.pdf pdf_icon

MTB080N15J3

Spec. No. C987J3 Issued Date 2015.02.03 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 150V MTB080N15J3 ID @VGS=10V, TC=25 C 18A RDS(ON)@VGS=10V, ID=10A 82.3m (typ) RDS(ON)@VGS=4.5V, ID=10A 85.8m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free pack... See More ⇒

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 mtb08n04j3.pdf pdf_icon

MTB080N15J3

Spec. No. C892J3 Issued Date 2014.05.29 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB08N04J3 ID @VGS=10V 60A RDS(ON)@VGS=10V, ID=15A 5.4m (typ) RDS(ON)@VGS=5V, ID=10A 9.0m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C... See More ⇒

Detailed specifications: MSW16N50, MSW20N50, MSW20N60, MSW9N90, MTA090N02KC3, MTA340N02KC3, MTA55N20J3, MTB070P15J3, IRF740, MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3, MTB20A06Q8, MTB20N04J3, MTB23P06VT4, MTB25C04Q8

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