MTB20A06Q8 Datasheet. Specs and Replacement

Type Designator: MTB20A06Q8  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.2 nS

Cossⓘ - Output Capacitance: 107 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP-8

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MTB20A06Q8 datasheet

 ..1. Size:384K  cystek
mtb20a06q8.pdf pdf_icon

MTB20A06Q8

Spec. No. C925Q8 Issued Date 2014.11.12 CYStech Electronics Corp. Revised Date Page No. 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB20A06Q8 ID@VGS=10V, TA=25 C 6A ID@VGS=10V, TC=25 C 8.5A RDS(ON)@VGS=10V, ID=6A 15.4 m (typ) RDS(ON)@VGS=4.5V, ID=5A 16.3 m (typ) Features Single Drive Requirement Low On-resistance ... See More ⇒

 7.1. Size:351K  cystek
mtb20a03q8.pdf pdf_icon

MTB20A06Q8

Spec. No. C396Q8 Issued Date 2012.07.03 CYStech Electronics Corp. Revised Date 2013.03.01 Page No. 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB20A03Q8 ID 6.8A RDS(ON)@VGS=10V, ID=6A 20 m (typ) RDS(ON)@VGS=4.5V, ID=4A 29 m (typ) Description The MTB20A03Q8 provides the designer with the best combination of fast switching, ruggedized de... See More ⇒

 9.1. Size:222K  motorola
mtb20n20e.pdf pdf_icon

MTB20A06Q8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

 9.2. Size:258K  motorola
mtb20n20erev2x.pdf pdf_icon

MTB20A06Q8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

Detailed specifications: MTA340N02KC3, MTA55N20J3, MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3, 50N06, MTB20N04J3, MTB23P06VT4, MTB25C04Q8, MTB2D5N03BH8, MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G

Keywords - MTB20A06Q8 MOSFET specs

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