MTB20A06Q8 datasheet, подбор замены

 ..1. Size:384K  cystek
 mtb20a06q8.pdf 

Spec. No. C925Q8 Issued Date 2014.11.12 CYStech Electronics Corp. Revised Date Page No. 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60V MTB20A06Q8 ID@VGS=10V, TA=25 C 6A ID@VGS=10V, TC=25 C 8.5A RDS(ON)@VGS=10V, ID=6A 15.4 m (typ) RDS(ON)@VGS=4.5V, ID=5A 16.3 m (typ) Features Single Drive Requirement Low On-resistance

 7.1. Size:351K  cystek
 mtb20a03q8.pdf 

Spec. No. C396Q8 Issued Date 2012.07.03 CYStech Electronics Corp. Revised Date 2013.03.01 Page No. 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB20A03Q8 ID 6.8A RDS(ON)@VGS=10V, ID=6A 20 m (typ) RDS(ON)@VGS=4.5V, ID=4A 29 m (typ) Description The MTB20A03Q8 provides the designer with the best combination of fast switching, ruggedized de

 9.1. Size:222K  motorola
 mtb20n20e.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m

 9.2. Size:258K  motorola
 mtb20n20erev2x.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m

 9.3. Size:366K  cystek
 mtb20n04j3.pdf 

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package

 9.4. Size:367K  cystek
 mtb20n03aq8.pdf 

Spec. No. C737Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03AQ8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m (typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

 9.5. Size:498K  cystek
 mtb20n06kj3.pdf 

Spec. No. C103J3 Issued Date 2015.12.31 CYStech Electronics Corp. Revised Date 2018.04.12 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06KJ3 ID@VGS=10V, TC=25 C 38A ID@VGS=10V, TA=25 C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m (typ) Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m (typ) RDS(ON)@VGS=4V, ID=4A 17.2 m (typ) Low On Resistance

 9.6. Size:312K  cystek
 mtb20n06j3.pdf 

Spec. No. C925J3 Issued Date 2013.08.13 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06J3 ID 42A RDS(ON)@VGS=10V, ID=20A 14.6 m (typ) RDS(ON)@VGS=4.5V, ID=20A 16.7 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

 9.7. Size:296K  cystek
 mtb20p03l3.pdf 

Spec. No. C391L3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTB20P03L3 ID -10A RDSON(MAX) 20m Description The MTB20P03L3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost

 9.8. Size:356K  cystek
 mtb20c03j4.pdf 

Spec. No. C914J4 Issued Date 2013.05.13 CYStech Electronics Corp. Revised Date 2013.12.31 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTB20C03J4 BVDSS 30V -30V ID 8A -7A 18m 28m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB20C03J4 TO-

 9.9. Size:331K  cystek
 mtb20n03q8.pdf 

Spec. No. C396Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2014.02.14 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03Q8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m (typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c