MTB20A06Q8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTB20A06Q8
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.75 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 8.5 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 40.4 nC
Время нарастания (tr): 16.2 ns
Выходная емкость (Cd): 107 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: SOP-8
Аналог (замена) для MTB20A06Q8
MTB20A06Q8 Datasheet (PDF)
mtb20a06q8.pdf
Spec. No. : C925Q8 Issued Date : 2014.11.12 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTB20A06Q8 ID@VGS=10V, TA=25C 6A ID@VGS=10V, TC=25C 8.5A RDS(ON)@VGS=10V, ID=6A 15.4 m(typ) RDS(ON)@VGS=4.5V, ID=5A 16.3 m(typ) Features Single Drive Requirement Low On-resistance
mtb20a03q8.pdf
Spec. No. : C396Q8 Issued Date : 2012.07.03 CYStech Electronics Corp.Revised Date : 2013.03.01 Page No. : 1/9 Dual N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTB20A03Q8 ID 6.8ARDS(ON)@VGS=10V, ID=6A 20 m(typ) RDS(ON)@VGS=4.5V, ID=4A 29 m(typ) Description The MTB20A03Q8 provides the designer with the best combination of fast switching, ruggedized de
mtb20n20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB20N20E/DDesigner's Data SheetMTB20N20ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.16 OHMthan any existing surface m
mtb20n20erev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB20N20E/DDesigner's Data SheetMTB20N20ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 20 AMPERES200 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.16 OHMthan any existing surface m
mtb20n04j3.pdf
Spec. No. : C978J3 Issued Date : 2015.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB20N04J3 ID@VGS=10V, TC=25C 23A ID@VGS=10V, TC=100C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package
mtb20n03aq8.pdf
Spec. No. : C737Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.03.01 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03AQ8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m(typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
mtb20n06kj3.pdf
Spec. No. : C103J3 Issued Date : 2015.12.31 CYStech Electronics Corp. Revised Date : 2018.04.12 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06KJ3 ID@VGS=10V, TC=25C 38A ID@VGS=10V, TA=25C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m(typ)Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m(typ)RDS(ON)@VGS=4V, ID=4A 17.2 m(typ) Low On Resistance
mtb20n06j3.pdf
Spec. No. : C925J3 Issued Date : 2013.08.13 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06J3 ID 42ARDS(ON)@VGS=10V, ID=20A 14.6 m(typ)RDS(ON)@VGS=4.5V, ID=20A 16.7 m(typ)Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic
mtb20p03l3.pdf
Spec. No. : C391L3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30VMTB20P03L3 ID -10ARDSON(MAX) 20m Description The MTB20P03L3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost
mtb20c03j4.pdf
Spec. No. : C914J4 Issued Date : 2013.05.13 CYStech Electronics Corp.Revised Date : 2013.12.31 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CHMTB20C03J4 BVDSS 30V -30VID 8A -7A18m 28m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB20C03J4 TO-
mtb20n03q8.pdf
Spec. No. : C396Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2014.02.14 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03Q8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m(typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c
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