MTB20N04J3 Datasheet. Specs and Replacement

Type Designator: MTB20N04J3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.8 nS

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-252

  📄📄 Copy 

MTB20N04J3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB20N04J3 datasheet

 ..1. Size:366K  cystek
 mtb20n04j3.pdf pdf_icon

MTB20N04J3

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package ... See More ⇒

 7.1. Size:367K  cystek
 mtb20n03aq8.pdf pdf_icon

MTB20N04J3

Spec. No. C737Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03AQ8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m (typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒

 7.2. Size:498K  cystek
 mtb20n06kj3.pdf pdf_icon

MTB20N04J3

Spec. No. C103J3 Issued Date 2015.12.31 CYStech Electronics Corp. Revised Date 2018.04.12 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06KJ3 ID@VGS=10V, TC=25 C 38A ID@VGS=10V, TA=25 C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m (typ) Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m (typ) RDS(ON)@VGS=4V, ID=4A 17.2 m (typ) Low On Resistance ... See More ⇒

 7.3. Size:312K  cystek
 mtb20n06j3.pdf pdf_icon

MTB20N04J3

Spec. No. C925J3 Issued Date 2013.08.13 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06J3 ID 42A RDS(ON)@VGS=10V, ID=20A 14.6 m (typ) RDS(ON)@VGS=4.5V, ID=20A 16.7 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ... See More ⇒

SHOW MORE

Detailed specifications: MTA55N20J3, MTB070P15J3, MTB080N15J3, MTB09P03E3, MTB09P04DJ3, MTB110P10L3, MTB160N25J3, MTB20A06Q8, IRFP460, MTB23P06VT4, MTB25C04Q8, MTB2D5N03BH8, MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8

Keywords - MTB20N04J3 MOSFET specs

 MTB20N04J3 cross reference

 MTB20N04J3 equivalent finder

 MTB20N04J3 pdf lookup

 MTB20N04J3 substitution

 MTB20N04J3 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.