MTB25C04Q8
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTB25C04Q8
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 11.4
nC
trⓘ - Rise Time: 16.2
nS
Cossⓘ -
Output Capacitance: 50
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027
Ohm
Package:
SOP-8
MTB25C04Q8
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTB25C04Q8
Datasheet (PDF)
..1. Size:436K cystek
mtb25c04q8.pdf 
Spec. No. : C955Q8 Issued Date : 2015.03.09 CYStech Electronics Corp.Revised Date : Page No. : 1/12 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTB25C04Q8 BVDSS 40V -40VID @ TA=25C, VGS=10V(-10V) 5.7A -4.9AID @ TA=70C, VGS=10V(-10V) 4.8A -4.1AID @ TC=25C, VGS=10V(-10V) 10A -8.6AID @ TC=100C, VGS=10V(-10V) 7.1A -6.1ARDSON(typ.) @VGS=(-)10V 21.
9.1. Size:367K cystek
mtb25n04j3.pdf
Spec. No. : C884J3 Issued Date : 2012.12.07 CYStech Electronics Corp.Revised Date : 2014.03.14 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB25N04J3 ID 29ARDS(ON)@VGS=10V, ID=12A 20m(typ) RDS(ON)@VGS=4.5V, ID=10A 27m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen
9.2. Size:373K cystek
mtb25p04v8.pdf
Spec. No. : C878V8 Issued Date : 2014.03.11 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode MOSFET BVDSS -40VMTB25P04V8 ID -27ARDSON@VGS=-10V, ID=-10A 13 m(typ) RDSON@VGS=-4.5V, ID=-6A 19 m(typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating and halogen-free packag
9.3. Size:339K cystek
mtb25p06fp.pdf
Spec. No. : C584FP Issued Date : 2014.07.03 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60VMTB25P06FP ID -52ARDS(ON)@VGS=-10V, ID=-20A 18.8m(typ) RDS(ON)@VGS=-4.5V, ID=-20A 21.8m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circu
9.4. Size:307K cystek
mtb25a04q8.pdf
Spec. No. : C884Q8 Issued Date : 2013.02.06 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/9 Dual N-Channel Enhancement Mode Power MOSFET BVDSS 40VMTB25A04Q8 ID 12ARDSON@VGS=10V, ID=8A 20m(typ)RDSON@VGS=4.5V, ID=5A 26m(typ)Features Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb
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