All MOSFET. MTB5D0P03J3 Datasheet

 

MTB5D0P03J3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTB5D0P03J3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 88 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 21.6 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-252

 MTB5D0P03J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB5D0P03J3 Datasheet (PDF)

 ..1. Size:371K  cystek
 mtb5d0p03j3.pdf

MTB5D0P03J3 MTB5D0P03J3

Spec. No. : C965J3 Issued Date : 2014.09.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTB5D0P03J3 ID @VGS=-10V -88ARDS(ON)@VGS=-10V, ID=-25A 3.7m(typ) RDS(ON)@VGS=-4.5V, ID=-10A 5.1m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equ

 5.1. Size:371K  cystek
 mtb5d0p03q8.pdf

MTB5D0P03J3 MTB5D0P03J3

Spec. No. : C965Q8 Issued Date : 2014.12.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB5D0P03Q8 ID@VGS=-10V, TA=25C -20A ID@VGS=-4.5V, TA=25C -16A ID@VGS=-10V, TC=25C -28A ID@VGS=-4.5V, TC=25C -22A RDSON@VGS=-10V, ID=-20A 3.0m(typ) Features RDSON@VGS=-4.5V, ID=-17A 4.2m(typ) Simple d

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTH80N20L

 

 
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