MTB5D0P03J3 Datasheet. Specs and Replacement

Type Designator: MTB5D0P03J3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.6 nS

Cossⓘ - Output Capacitance: 739 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO-252

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MTB5D0P03J3 datasheet

 ..1. Size:371K  cystek
 mtb5d0p03j3.pdf pdf_icon

MTB5D0P03J3

Spec. No. C965J3 Issued Date 2014.09.15 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB5D0P03J3 ID @VGS=-10V -88A RDS(ON)@VGS=-10V, ID=-25A 3.7m (typ) RDS(ON)@VGS=-4.5V, ID=-10A 5.1m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equ... See More ⇒

 5.1. Size:371K  cystek
 mtb5d0p03q8.pdf pdf_icon

MTB5D0P03J3

Spec. No. C965Q8 Issued Date 2014.12.03 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB5D0P03Q8 ID@VGS=-10V, TA=25 C -20A ID@VGS=-4.5V, TA=25 C -16A ID@VGS=-10V, TC=25 C -28A ID@VGS=-4.5V, TC=25 C -22A RDSON@VGS=-10V, ID=-20A 3.0m (typ) Features RDSON@VGS=-4.5V, ID=-17A 4.2m (typ) Simple d... See More ⇒

Detailed specifications: MTB2P50ET4G, MTB300N10L3, MTB30P06VT4, MTB30P06VT4G, MTB3D0N03BH8, MTB50P03HDLG, MTB50P03HDLT4, MTB50P03HDLT4G, AON6414A, MTB5D0P03Q8, MTB60P15H8, MTB6D0N03BH8, MTB75N05HDT4, MTBA5C10V8, MTBA6C12Q8, MTBA6C15J4, MTBA6C15Q8

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