All MOSFET. MTB5D0P03Q8 Datasheet

 

MTB5D0P03Q8 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTB5D0P03Q8

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 6.3 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25.6 nS

Drain-Source Capacitance (Cd): 849 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0045 Ohm

Package: SOP-8

MTB5D0P03Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTB5D0P03Q8 Datasheet (PDF)

0.1. mtb5d0p03q8.pdf Size:371K _cystek

MTB5D0P03Q8
MTB5D0P03Q8

Spec. No. : C965Q8 Issued Date : 2014.12.03 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB5D0P03Q8 ID@VGS=-10V, TA=25°C -20A ID@VGS=-4.5V, TA=25°C -16A ID@VGS=-10V, TC=25°C -28A ID@VGS=-4.5V, TC=25°C -22A RDSON@VGS=-10V, ID=-20A 3.0mΩ(typ) Features RDSON@VGS=-4.5V, ID=-17A 4.2mΩ(typ) • Simple d

5.1. mtb5d0p03j3.pdf Size:371K _cystek

MTB5D0P03Q8
MTB5D0P03Q8

Spec. No. : C965J3 Issued Date : 2014.09.15 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB5D0P03J3 ID @VGS=-10V -88A RDS(ON)@VGS=-10V, ID=-25A 3.7mΩ(typ) RDS(ON)@VGS=-4.5V, ID=-10A 5.1mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & halogen-free package Equ

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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