All MOSFET. MTB5D0P03Q8 Datasheet

 

MTB5D0P03Q8 Datasheet and Replacement


   Type Designator: MTB5D0P03Q8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.6 nS
   Cossⓘ - Output Capacitance: 849 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: SOP-8
 

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MTB5D0P03Q8 Datasheet (PDF)

 ..1. Size:371K  cystek
 mtb5d0p03q8.pdf pdf_icon

MTB5D0P03Q8

Spec. No. : C965Q8 Issued Date : 2014.12.03 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTB5D0P03Q8 ID@VGS=-10V, TA=25C -20A ID@VGS=-4.5V, TA=25C -16A ID@VGS=-10V, TC=25C -28A ID@VGS=-4.5V, TC=25C -22A RDSON@VGS=-10V, ID=-20A 3.0m(typ) Features RDSON@VGS=-4.5V, ID=-17A 4.2m(typ) Simple d

 5.1. Size:371K  cystek
 mtb5d0p03j3.pdf pdf_icon

MTB5D0P03Q8

Spec. No. : C965J3 Issued Date : 2014.09.15 CYStech Electronics Corp.Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -30VMTB5D0P03J3 ID @VGS=-10V -88ARDS(ON)@VGS=-10V, ID=-25A 3.7m(typ) RDS(ON)@VGS=-4.5V, ID=-10A 5.1m(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equ

Datasheet: MTB300N10L3 , MTB30P06VT4 , MTB30P06VT4G , MTB3D0N03BH8 , MTB50P03HDLG , MTB50P03HDLT4 , MTB50P03HDLT4G , MTB5D0P03J3 , IRFP250N , MTB60P15H8 , MTB6D0N03BH8 , MTB75N05HDT4 , MTBA5C10V8 , MTBA6C12Q8 , MTBA6C15J4 , MTBA6C15Q8 , APM1105NU .

History: NTTFS4C10N | NP60N04MUG | SNN4010D | HSBA3058 | STI60N55F3

Keywords - MTB5D0P03Q8 MOSFET datasheet

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