APQ01SN60AB Datasheet. Specs and Replacement

Type Designator: APQ01SN60AB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.7 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm

Package: TO-252

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APQ01SN60AB datasheet

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APQ01SN60AB

DEVICE SPECIFICATION APQ01SN60AA APQ01SN60AB 600V/1A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 1A effect transistors are produced using planar stripe, RDS(on) =7.9 (typ) VGS =10V, ID =0.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to... See More ⇒

 4.1. Size:717K  alpha pacific
 apq01sn60aa.pdf pdf_icon

APQ01SN60AB

DEVICE SPECIFICATION APQ01SN60AA APQ01SN60AB 600V/1A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 1A effect transistors are produced using planar stripe, RDS(on) =7.9 (typ) VGS =10V, ID =0.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to... See More ⇒

Detailed specifications: APM4030BNU, APM4050BPU, APM4927K, APM6010K, APM6055NU, APM8010K, APM9988QG, APQ01SN60AA, 12N60, APQ02SN60A, APQ02SN60AA, APQ02SN60AB, APQ02SN60AF, APQ02SN60AH, APQ02SN65AA, APQ02SN65AB, APQ02SN65AF

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