All MOSFET. APQ01SN60AB Datasheet

 

APQ01SN60AB Datasheet and Replacement


   Type Designator: APQ01SN60AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.7 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
   Package: TO-252
 

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APQ01SN60AB Datasheet (PDF)

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APQ01SN60AB

DEVICE SPECIFICATION APQ01SN60AA APQ01SN60AB 600V/1A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 1A effect transistors are produced using planar stripe, RDS(on) =7.9(typ) VGS =10V, ID =0.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.1. Size:717K  alpha pacific
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APQ01SN60AB

DEVICE SPECIFICATION APQ01SN60AA APQ01SN60AB 600V/1A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 1A effect transistors are produced using planar stripe, RDS(on) =7.9(typ) VGS =10V, ID =0.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

Datasheet: APM4030BNU , APM4050BPU , APM4927K , APM6010K , APM6055NU , APM8010K , APM9988QG , APQ01SN60AA , 4N60 , APQ02SN60A , APQ02SN60AA , APQ02SN60AB , APQ02SN60AF , APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF .

History: BRU26N50 | FDWS9509L-F085 | STT3471P | R6004CND | CEB7030L | IRFPG40 | FQP7P20

Keywords - APQ01SN60AB MOSFET datasheet

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