IRFS720A Specs and Replacement
Type Designator: IRFS720A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220F
IRFS720A substitution
- MOSFET ⓘ Cross-Reference Search
IRFS720A datasheet
irfs720a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒
Detailed specifications: IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , RFP50N06 , IRFS721 , IRFS722 , IRFS723 , IRFS730 , IRFS730A , IRFS731 , IRFS732 , IRFS733 .
Keywords - IRFS720A MOSFET specs
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