All MOSFET. IRFS720A Datasheet

 

IRFS720A Datasheet and Replacement


   Type Designator: IRFS720A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO220F
 

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IRFS720A Datasheet (PDF)

 ..1. Size:501K  samsung
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IRFS720A

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

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IRFS720A

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IRFS720A

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IRFS720A

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

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Datasheet: IRFS642 , IRFS644 , IRFS644A , IRFS645 , IRFS650A , IRFS654A , IRFS710A , IRFS720 , SKD502T , IRFS721 , IRFS722 , IRFS723 , IRFS730 , IRFS730A , IRFS731 , IRFS732 , IRFS733 .

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