All MOSFET. APQ03SN60AB Datasheet

 

APQ03SN60AB MOSFET. Datasheet pdf. Equivalent


   Type Designator: APQ03SN60AB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.7 nC
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: TO-252

 APQ03SN60AB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APQ03SN60AB Datasheet (PDF)

 ..1. Size:353K  alpha pacific
 apq03sn60ab.pdf

APQ03SN60AB APQ03SN60AB

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 3ARDS(on) =3.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 7.1. Size:897K  alpha pacific
 apq03sn80cf apq03sn80ch.pdf

APQ03SN60AB APQ03SN60AB

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 7.2. Size:856K  alpha pacific
 apq03sn80cb.pdf

APQ03SN60AB APQ03SN60AB

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

 7.3. Size:470K  alpha pacific
 apq03sn80a apq03sn80af.pdf

APQ03SN60AB APQ03SN60AB

DEVICE SPECIFICATION apQ03SN80A(F)800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6(typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FDMA2002NZ | IRFN044

 

 
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