Справочник MOSFET. APQ03SN60AB

 

APQ03SN60AB Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ03SN60AB
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 48 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.8 Ohm
   Тип корпуса: TO-252
 

 Аналог (замена) для APQ03SN60AB

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ03SN60AB Datasheet (PDF)

 ..1. Size:353K  alpha pacific
 apq03sn60ab.pdf pdf_icon

APQ03SN60AB

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 3ARDS(on) =3.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

 7.1. Size:897K  alpha pacific
 apq03sn80cf apq03sn80ch.pdf pdf_icon

APQ03SN60AB

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 7.2. Size:856K  alpha pacific
 apq03sn80cb.pdf pdf_icon

APQ03SN60AB

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

 7.3. Size:470K  alpha pacific
 apq03sn80a apq03sn80af.pdf pdf_icon

APQ03SN60AB

DEVICE SPECIFICATION apQ03SN80A(F)800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6(typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APQ02SN60AA , APQ02SN60AB , APQ02SN60AF , APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , IRF1407 , APQ03SN80A , APQ03SN80AF , APQ03SN80CB , APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF , APQ04SN60CA .

 

 
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