APQ03SN80AF MOSFET Datasheet: N-Ch, 800V, 3A. Full specification with pinout and replacement list

APQ03SN80AF Specs and Replacement

Type Designator: APQ03SN80AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220F

APQ03SN80AF substitution

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APQ03SN80AF datasheet

..1. Size:470K alpha pacific
apq03sn80a apq03sn80af.pdf pdf_icon

DEVICE SPECIFICATION apQ03SN80A(F) 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

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apq03sn80cf apq03sn80ch.pdf pdf_icon

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

5.2. Size:856K alpha pacific
apq03sn80cb.pdf pdf_icon

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

7.1. Size:353K alpha pacific
apq03sn60ab.pdf pdf_icon

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 3A RDS(on) =3.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

Detailed specifications: APQ02SN60AF, APQ02SN60AH, APQ02SN65AA, APQ02SN65AB, APQ02SN65AF, APQ02SN65AH, APQ03SN60AB, APQ03SN80A, AO4407, APQ03SN80CB, APQ03SN80CF, APQ03SN80CH, APQ04SN60A, APQ04SN60AF, APQ04SN60CA, APQ04SN60CB, APQ04SN60CE