APQ03SN80AF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APQ03SN80AF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 39 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 14 nC
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 55 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-220F
Аналог (замена) для APQ03SN80AF
APQ03SN80AF Datasheet (PDF)
apq03sn80a apq03sn80af.pdf

DEVICE SPECIFICATION apQ03SN80A(F)800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6(typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
apq03sn80cf apq03sn80ch.pdf

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to
apq03sn80cb.pdf

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
apq03sn60ab.pdf

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 3ARDS(on) =3.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .



Список транзисторов
Обновления
MOSFET: JMSL0303TU | JMSL0303TG | JMSL0303AU | JMSL0303AK | JMSL0303AG | JMSL0315AK | JMSL0315AGD | JMSL0315AG | JMSL0310AU | JMSL030STG | JMSL030SPG | JMSL030SAG | JMSL0307AV | JMSL0307AG | JMSH1008PK | JMSH1008PGQ
Popular searches
2sa906 | c2389 transistor | c2634 transistor | mdp1991 datasheet | 40636 transistor | ao3407 datasheet | c1841 transistor | fb42n20d