APQ03SN80AF - параметры транзистора MOSFET, его аналоги, datasheet

APQ03SN80AF Datasheet (PDF)

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apq03sn80a apq03sn80af.pdf pdf_icon

DEVICE SPECIFICATION apQ03SN80A(F)800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6(typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

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apq03sn80cf apq03sn80ch.pdf pdf_icon

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

5.2. Size:856K alpha pacific
apq03sn80cb.pdf pdf_icon

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0(typ)VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

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apq03sn60ab.pdf pdf_icon

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 600V / 3ARDS(on) =3.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Другие MOSFET... APQ02SN60AF , APQ02SN60AH , APQ02SN65AA , APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB , APQ03SN80A , P0903BDG , APQ03SN80CB , APQ03SN80CF , APQ03SN80CH , APQ04SN60A , APQ04SN60AF , APQ04SN60CA , APQ04SN60CB , APQ04SN60CE .