APQ03SN80CH PDF and Equivalents Search

 

APQ03SN80CH PDF Specs and Replacement


   Type Designator: APQ03SN80CH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO-220
 

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APQ03SN80CH PDF Specs

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 apq03sn80cf apq03sn80ch.pdf pdf_icon

APQ03SN80CH

DEVICE SPECIFICATION APQ03SN80CH APQ03SN80CF 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

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 apq03sn80cb.pdf pdf_icon

APQ03SN80CH

DEVICE SPECIFICATION APQ03SN80CB 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =4.0 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

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 apq03sn80a apq03sn80af.pdf pdf_icon

APQ03SN80CH

DEVICE SPECIFICATION apQ03SN80A(F) 800V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 800V / 3A effect transistors are produced using planar stripe, RDS(on) =3.6 (typ) VGS =10V, ID =1.5A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

 7.1. Size:353K  alpha pacific
 apq03sn60ab.pdf pdf_icon

APQ03SN80CH

DEVICE SPECIFICATION apQ03SN60AB 600V/3A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 3A RDS(on) =3.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =1.8A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

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Detailed specifications: APQ02SN65AB , APQ02SN65AF , APQ02SN65AH , APQ03SN60AB , APQ03SN80A , APQ03SN80AF , APQ03SN80CB , APQ03SN80CF , IRFP250 , APQ04SN60A , APQ04SN60AF , APQ04SN60CA , APQ04SN60CB , APQ04SN60CE , APQ04SN60CF , APQ04SN60CH , APQ05SN60A .

Keywords - APQ03SN80CH MOSFET specs

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