APQ04SN60AF MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

APQ04SN60AF Specs and Replacement

Type Designator: APQ04SN60AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO-220F

APQ04SN60AF substitution

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APQ04SN60AF datasheet

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apq04sn60a apq04sn60af.pdf pdf_icon

DEVICE SPECIFICATION apQ04SN60A(F) 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize... See More ⇒

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apq04sn60cf apq04sn60ch.pdf pdf_icon

DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored ... See More ⇒

5.2. Size:703K alpha pacific
apq04sn60ca apq04sn60cb.pdf pdf_icon

DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored... See More ⇒

5.3. Size:489K alpha pacific
apq04sn60ce.pdf pdf_icon

DEVICE SPECIFICATION APQ04SN60CE 600V/4A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9 (typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-... See More ⇒

Detailed specifications: APQ02SN65AH, APQ03SN60AB, APQ03SN80A, APQ03SN80AF, APQ03SN80CB, APQ03SN80CF, APQ03SN80CH, APQ04SN60A, 2SK3568, APQ04SN60CA, APQ04SN60CB, APQ04SN60CE, APQ04SN60CF, APQ04SN60CH, APQ05SN60A, APQ05SN60AF, APQ06SN60A