APQ04SN60AF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APQ04SN60AF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 33 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 67 pf
Сопротивление сток-исток открытого транзистора (Rds): 2.3 Ohm
Тип корпуса: TO-220F
Аналог (замена) для APQ04SN60AF
APQ04SN60AF Datasheet (PDF)
apq04sn60a apq04sn60af.pdf
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DEVICE SPECIFICATION apQ04SN60A(F)600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A RDS(on) = 1.72(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize
apq04sn60cf apq04sn60ch.pdf
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DEVICE SPECIFICATION APQ04SN60CH APQ04SN60CF 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored
apq04sn60ca apq04sn60cb.pdf
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DEVICE SPECIFICATION APQ04SN60CA APQ04SN60CB 600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ) VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored
apq04sn60ce.pdf
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DEVICE SPECIFICATION APQ04SN60CE600V/4A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 4A field effect transistors are produced using planar RDS(on) = 1.9(typ)VGS = 10 V ,ID =2.4A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![APQ04SN60AF](https://alltransistors.com/images/us.png)
![APQ04SN60AF](https://alltransistors.com/images/es.png)
![APQ04SN60AF](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C