APQ05SN60A PDF and Equivalents Search

 

APQ05SN60A Specs and Replacement

Type Designator: APQ05SN60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO-220

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APQ05SN60A datasheet

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APQ05SN60A

DEVICE SPECIFICATION apQ05SN60A(F) 600V/5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 5A RDS(on) = 1.5 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =2.5A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimiz... See More ⇒

Detailed specifications: APQ03SN80CH, APQ04SN60A, APQ04SN60AF, APQ04SN60CA, APQ04SN60CB, APQ04SN60CE, APQ04SN60CF, APQ04SN60CH, 18N50, APQ05SN60AF, APQ06SN60A, APQ06SN60AF, APQ06SN60AH, APQ06SN65AF, APQ06SN65AH, APQ07SN60AF, APQ07SN60AH

Keywords - APQ05SN60A MOSFET specs

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