APQ06SN60AH PDF and Equivalents Search

 

APQ06SN60AH Specs and Replacement

Type Designator: APQ06SN60AH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220

APQ06SN60AH substitution

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APQ06SN60AH datasheet

 ..1. Size:695K  alpha pacific
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APQ06SN60AH

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0 (typ) VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

 4.1. Size:377K  alpha pacific
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APQ06SN60AH

DEVICE SPECIFICATION apQ06SN60A(F) 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A RDS(on) =1.0 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-... See More ⇒

 4.2. Size:661K  alpha pacific
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APQ06SN60AH

DEVICE SPECIFICATION APQ06SN60AH APQ06SN60AF 600V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 600V / 6A effect transistors are produced using planar stripe, RDS(on) =1.0 (typ) VGS =10V, ID =3.6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

 6.1. Size:633K  alpha pacific
apq06sn65af apq06sn65ah.pdf pdf_icon

APQ06SN60AH

DEVICE SPECIFICATION APQ06SN65AH APQ06SN65AF 650V/6A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 6A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =3A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

Detailed specifications: APQ04SN60CB, APQ04SN60CE, APQ04SN60CF, APQ04SN60CH, APQ05SN60A, APQ05SN60AF, APQ06SN60A, APQ06SN60AF, STF13NM60N, APQ06SN65AF, APQ06SN65AH, APQ07SN60AF, APQ07SN60AH, APQ07SN65AF, APQ07SN65AH, APQ07SN80BF, APQ07SN80BH

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