All MOSFET. APQ10SN40A Datasheet

 

APQ10SN40A Datasheet and Replacement


   Type Designator: APQ10SN40A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO-220
 

 APQ10SN40A substitution

   - MOSFET ⓘ Cross-Reference Search

 

APQ10SN40A Datasheet (PDF)

 ..1. Size:303K  alpha pacific
 apq10sn40a.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION apQ10SN40A400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 0.1. Size:914K  alpha pacific
 apq10sn40af.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49(typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 0.2. Size:914K  alpha pacific
 apq10sn40ah.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49(typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 7.1. Size:687K  alpha pacific
 apq10sn60af.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

SHOW MORE

Datasheet: APQ08SN50BF , APQ08SN50BH , APQ09SN50A , APQ09SN50AF , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ , 2SK3918 , APQ10SN40AF , APQ10SN40AH , APQ10SN60A , APQ10SN60AF , APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA .

Keywords - APQ10SN40A MOSFET datasheet

 APQ10SN40A cross reference
 APQ10SN40A equivalent finder
 APQ10SN40A lookup
 APQ10SN40A substitution
 APQ10SN40A replacement

 

 
Back to Top

 


 
.