Справочник MOSFET. APQ10SN40A

 

APQ10SN40A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ10SN40A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 134 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 330 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

APQ10SN40A Datasheet (PDF)

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APQ10SN40A

DEVICE SPECIFICATION apQ10SN40A400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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 apq10sn40af.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49(typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 0.2. Size:914K  alpha pacific
 apq10sn40ah.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49(typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

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 apq10sn60af.pdf pdf_icon

APQ10SN40A

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFETDescription 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6(Typ)VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

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History: KX6N70 | CHM1503YJGP

 

 
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