APQ10SN40AH PDF and Equivalents Search

 

APQ10SN40AH Specs and Replacement

Type Designator: APQ10SN40AH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO-220

APQ10SN40AH substitution

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APQ10SN40AH datasheet

 ..1. Size:914K  alpha pacific
 apq10sn40ah.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

 4.1. Size:914K  alpha pacific
 apq10sn40af.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to ... See More ⇒

 4.2. Size:303K  alpha pacific
 apq10sn40a.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION apQ10SN40A 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

 7.1. Size:687K  alpha pacific
 apq10sn60af.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi... See More ⇒

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Detailed specifications: APQ09SN50A , APQ09SN50AF , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ , APQ10SN40A , APQ10SN40AF , MMIS60R580P , APQ10SN60A , APQ10SN60AF , APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH .

Keywords - APQ10SN40AH MOSFET specs

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