APQ10SN40AH - описание и поиск аналогов

 

APQ10SN40AH. Аналоги и основные параметры

Наименование производителя: APQ10SN40AH

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 134 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 330 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm

Тип корпуса: TO-220

Аналог (замена) для APQ10SN40AH

- подборⓘ MOSFET транзистора по параметрам

 

APQ10SN40AH даташит

 ..1. Size:914K  alpha pacific
 apq10sn40ah.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.1. Size:914K  alpha pacific
 apq10sn40af.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION APQ10SN40AH APQ10SN40AF 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A effect transistors are produced using planar stripe, RDS(on) =0.49 (typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

 4.2. Size:303K  alpha pacific
 apq10sn40a.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION apQ10SN40A 400V/10A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 400V / 10A ,RDS(on) =0.49 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 7.1. Size:687K  alpha pacific
 apq10sn60af.pdf pdf_icon

APQ10SN40AH

DEVICE SPECIFICATION APQ10SN60AH APQ10SN60AF 600V/10A N-Channel MOSFET Description 1 Features These N-Channel enhancement mode power field 600V / 10A effect transistors are produced using planar stripe, RDS(on) =0.6 (Typ) VGS =10V, ID =6A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APQ09SN50A , APQ09SN50AF , APQ09SN90AD , APQ0CSN60A , APQ0CSN60AJ , APQ0DSN60AJ , APQ10SN40A , APQ10SN40AF , MMIS60R580P , APQ10SN60A , APQ10SN60AF , APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH .

 

 

 

 

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