APQ12SN60AF PDF and Equivalents Search

 

APQ12SN60AF Specs and Replacement

Type Designator: APQ12SN60AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO-220F

APQ12SN60AF substitution

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APQ12SN60AF datasheet

 ..1. Size:754K  alpha pacific
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APQ12SN60AF

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52 (typ) VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai... See More ⇒

 4.1. Size:754K  alpha pacific
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APQ12SN60AF

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52 (typ) VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai... See More ⇒

 4.2. Size:458K  alpha pacific
 apq12sn60a.pdf pdf_icon

APQ12SN60AF

DEVICE SPECIFICATION apQ12SN60A(F) 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini... See More ⇒

 6.1. Size:706K  alpha pacific
 apq12sn65af apq12sn65ah.pdf pdf_icon

APQ12SN60AF

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6 (typ) VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor... See More ⇒

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Detailed specifications: APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , APQ11BSN40A , APQ12SN60A , 20N60 , APQ12SN60AH , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH .

Keywords - APQ12SN60AF MOSFET specs

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