APQ12SN60AF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APQ12SN60AF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 83 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
Тип корпуса: TO-220F
Аналог (замена) для APQ12SN60AF
APQ12SN60AF Datasheet (PDF)
apq12sn60af.pdf

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai
apq12sn60ah.pdf

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai
apq12sn60a.pdf

DEVICE SPECIFICATION apQ12SN60A(F)600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini
apq12sn65af apq12sn65ah.pdf

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6(typ)VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor
Другие MOSFET... APQ10SN60AH , APQ10SN65AF , APQ10SN65AH , APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , APQ11BSN40A , APQ12SN60A , 20N60 , APQ12SN60AH , APQ12SN65AF , APQ12SN65AH , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH .



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