APQ12SN60AF - описание и поиск аналогов

 

Аналоги APQ12SN60AF. Основные параметры


   Наименование производителя: APQ12SN60AF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 83 ns
   Cossⓘ - Выходная емкость: 180 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для APQ12SN60AF

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ12SN60AF даташит

 ..1. Size:754K  alpha pacific
 apq12sn60af.pdf pdf_icon

APQ12SN60AF

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52 (typ) VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 4.1. Size:754K  alpha pacific
 apq12sn60ah.pdf pdf_icon

APQ12SN60AF

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52 (typ) VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 4.2. Size:458K  alpha pacific
 apq12sn60a.pdf pdf_icon

APQ12SN60AF

DEVICE SPECIFICATION apQ12SN60A(F) 600V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini

 6.1. Size:706K  alpha pacific
 apq12sn65af apq12sn65ah.pdf pdf_icon

APQ12SN60AF

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6 (typ) VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor

ПОКАЗАТЬ ЕЩЁ

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History: IRF7805Z

 

 
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