All MOSFET. APQ14SN65AF Datasheet

 

APQ14SN65AF Datasheet and Replacement


   Type Designator: APQ14SN65AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 29.6 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO-220F
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APQ14SN65AF Datasheet (PDF)

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APQ14SN65AF

DEVICE SPECIFICATION APQ14SN65AH APQ14SN65AF 650V/14A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 14A field effect transistors are produced using planar RDS(on) = 0.55(typ)VGS = 10 V ,ID =7A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailo

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History: CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | ALD1103DB | SFFX054Z

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