All MOSFET. APQ16SN06AA Datasheet

 

APQ16SN06AA Datasheet and Replacement


   Type Designator: APQ16SN06AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: TO-251
 

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APQ16SN06AA Datasheet (PDF)

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APQ16SN06AA

DEVICE SPECIFICATION APQ16SN06AA APQ16SN06AB 60V/16A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 16A effect transistors are produced using planar stripe, RDS(on) =52m(typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

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History: DH0159F

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