All MOSFET. APQ25SN06AA Datasheet

 

APQ25SN06AA Datasheet and Replacement


   Type Designator: APQ25SN06AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO-251
 

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APQ25SN06AA Datasheet (PDF)

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APQ25SN06AA

DEVICE SPECIFICATION APQ25SN06AA APQ25SN06AB 60V/25A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 25A effect transistors are produced using planar stripe, RDS(on) =27m(typ) VGS =10V, ID =20A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

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APQ25SN06AA

DEVICE SPECIFICATION APQ25SN06AA APQ25SN06AB 60V/25A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 25A effect transistors are produced using planar stripe, RDS(on) =27m(typ) VGS =10V, ID =20A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to

Datasheet: APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , IRF3710 , APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH .

History: MPVU4N70F | FMV07N50E | B4N80 | STH45N10 | APQ1HSN60AB | TMP16N60 | FQB5N20LTM

Keywords - APQ25SN06AA MOSFET datasheet

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