All MOSFET. APQ39SN04AA Datasheet

 

APQ39SN04AA Datasheet and Replacement


   Type Designator: APQ39SN04AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-251
 

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APQ39SN04AA Datasheet (PDF)

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APQ39SN04AA

DEVICE SPECIFICATION APQ39SN04AA APQ39SN04AB 40V/39A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 40V / 39A effect transistors are produced using planar stripe, RDS(on) =9m(typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

Datasheet: APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA , APQ1HSN60AB , APQ25SN06AA , APQ25SN06AB , IRFB4227 , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH .

History: IXTY3N50P | MDD3N50GRH | AP9563M | FDMS7680 | STV3NA80 | AOW292 | SQ2348ES-T1

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