All MOSFET. APQ39SN04AA Datasheet

 

APQ39SN04AA Datasheet and Replacement


   Type Designator: APQ39SN04AA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 31 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-251
 

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APQ39SN04AA Datasheet (PDF)

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APQ39SN04AA

DEVICE SPECIFICATION APQ39SN04AA APQ39SN04AB 40V/39A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 40V / 39A effect transistors are produced using planar stripe, RDS(on) =9m(typ) VGS =10V, ID =15A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to m

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History: HFU5N60F

Keywords - APQ39SN04AA MOSFET datasheet

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