All MOSFET. IRFS732 Datasheet

 

IRFS732 Datasheet and Replacement


   Type Designator: IRFS732
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

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IRFS732 Datasheet (PDF)

 ..1. Size:309K  1
 irfs730 irfs731 irfs732 irfs733.pdf pdf_icon

IRFS732

 8.1. Size:286K  1
 irfs730 irfs731.pdf pdf_icon

IRFS732

 8.2. Size:904K  fairchild semi
 irfs730b.pdf pdf_icon

IRFS732

November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

 8.3. Size:506K  samsung
 irfs730a.pdf pdf_icon

IRFS732

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

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Datasheet: IRFS720 , IRFS720A , IRFS721 , IRFS722 , IRFS723 , IRFS730 , IRFS730A , IRFS731 , AON7403 , IRFS733 , IRFS740 , IRFS740A , IRFS741 , IRFS742 , IRFS743 , IRFS750A , IRFS820 .

Keywords - IRFS732 MOSFET datasheet

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