APQ4ESN50AF Datasheet. Specs and Replacement
Type Designator: APQ4ESN50AF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220F
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APQ4ESN50AF substitution
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APQ4ESN50AF datasheet
apq4esn50af apq4esn50ah.pdf
DEVICE SPECIFICATION APQ4ESN50AH APQ4ESN50AF 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore... See More ⇒
apq4esn50a.pdf
DEVICE SPECIFICATION apQ4ESN50A(F) 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize... See More ⇒
apq4esn50ab.pdf
DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o... See More ⇒
apq4esn50ae.pdf
DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on... See More ⇒
Detailed specifications: APQ1HSN60AB, APQ25SN06AA, APQ25SN06AB, APQ39SN04AA, APQ39SN04AB, APQ4ESN50A, APQ4ESN50AB, APQ4ESN50AE, IRF9540, APQ4ESN50AH, APQ4ESN65AF, APQ4ESN65AH, APQ50SN06A, APQ50SN06AD, APQ50SN06AH, APQ57SN10B, APQ57SN10BH
Keywords - APQ4ESN50AF MOSFET specs
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History: APJ14N65D | VBE1202 | IPI80P03P4L-07 | 2SK4057
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