APQ50SN06AD MOSFET Datasheet: N-Ch, 60V, 50A. Full specification with pinout and replacement list

APQ50SN06AD Specs and Replacement

Type Designator: APQ50SN06AD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35.2 nS

Cossⓘ - Output Capacitance: 320.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-247

APQ50SN06AD substitution

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APQ50SN06AD datasheet

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DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒

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DEVICE SPECIFICATION apQ50SN06A 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

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DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒

Detailed specifications: APQ4ESN50A, APQ4ESN50AB, APQ4ESN50AE, APQ4ESN50AF, APQ4ESN50AH, APQ4ESN65AF, APQ4ESN65AH, APQ50SN06A, AON7408, APQ50SN06AH, APQ57SN10B, APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD