APQ5ESN40A Specs and Replacement
Type Designator: APQ5ESN40A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
APQ5ESN40A substitution
- MOSFET ⓘ Cross-Reference Search
APQ5ESN40A datasheet
apq5esn40a.pdf
DEVICE SPECIFICATION apQ5ESN40A 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A RDS(on) = 0.85 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini... See More ⇒
apq5esn40af.pdf
DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85 (typ) VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta... See More ⇒
apq5esn40ah.pdf
DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85 (typ) VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta... See More ⇒
Detailed specifications: APQ4ESN50AH, APQ4ESN65AF, APQ4ESN65AH, APQ50SN06A, APQ50SN06AD, APQ50SN06AH, APQ57SN10B, APQ57SN10BH, IRF9540N, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD, APQ65SN06AH, APQ84SN06A, APQ84SN06AD, APQ84SN06AH
Keywords - APQ5ESN40A MOSFET specs
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