APQ5ESN40A Datasheet and Replacement
Type Designator: APQ5ESN40A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
APQ5ESN40A substitution
APQ5ESN40A Datasheet (PDF)
apq5esn40a.pdf
DEVICE SPECIFICATION apQ5ESN40A 400V/5.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A RDS(on) = 0.85(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini
apq5esn40af.pdf
DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85(typ)VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta
apq5esn40ah.pdf
DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85(typ)VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta
Datasheet: APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , IRF1010E , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH .
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History: AP2318GEN | 45P40
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