APQ5ESN40AH MOSFET. Datasheet pdf. Equivalent
Type Designator: APQ5ESN40AH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220
APQ5ESN40AH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APQ5ESN40AH Datasheet (PDF)
apq5esn40ah.pdf
DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85(typ)VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta
apq5esn40af.pdf
DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85(typ)VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta
apq5esn40a.pdf
DEVICE SPECIFICATION apQ5ESN40A 400V/5.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A RDS(on) = 0.85(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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