APQ5ESN40AH MOSFET Datasheet: N-Ch, 400V, 5.5A. Full specification with pinout and replacement list

APQ5ESN40AH Specs and Replacement

   Type Designator: APQ5ESN40AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220

APQ5ESN40AH substitution

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APQ5ESN40AH datasheet

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DEVICE SPECIFICATION APQ5ESN40AH APQ5ESN40AF 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A field effect transistors are produced using planar RDS(on) = 0.85 (typ) VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested ta... See More ⇒

4.1. Size:789K alpha pacific
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4.2. Size:381K alpha pacific
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DEVICE SPECIFICATION apQ5ESN40A 400V/5.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 5.5A RDS(on) = 0.85 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =3.3A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini... See More ⇒

Detailed specifications: APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , IRLB4132 , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 .