APQ84SN06A Datasheet and Replacement
Type Designator: APQ84SN06A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 84 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 687 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-220
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APQ84SN06A Datasheet (PDF)
apq84sn06a.pdf
DEVICE SPECIFICATION apQ84SN06A60V/84A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =12m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =50.4A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
apq84sn06ad.pdf
DEVICE SPECIFICATION APQ84SN06AH 60V/84A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A effect transistors are produced using planar stripe, RDS(on) =9m(typ)VGS =10V, ID =42A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state
apq84sn06ah.pdf
DEVICE SPECIFICATION APQ84SN06AH 60V/84A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A effect transistors are produced using planar stripe, RDS(on) =9m(typ)VGS =10V, ID =42A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FSS9130D | MC08N005C | CEB10N65 | IRLR024 | MTN2604G6 | CED05N8 | BL10N70-A
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History: FSS9130D | MC08N005C | CEB10N65 | IRLR024 | MTN2604G6 | CED05N8 | BL10N70-A
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