APQ84SN06AD Specs and Replacement

Type Designator: APQ84SN06AD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 687 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-247

APQ84SN06AD substitution

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APQ84SN06AD datasheet

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APQ84SN06AD

DEVICE SPECIFICATION APQ84SN06AH 60V/84A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A effect transistors are produced using planar stripe, RDS(on) =9m (typ) VGS =10V, ID =42A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

 4.1. Size:714K  alpha pacific
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APQ84SN06AD

DEVICE SPECIFICATION APQ84SN06AH 60V/84A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A effect transistors are produced using planar stripe, RDS(on) =9m (typ) VGS =10V, ID =42A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

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APQ84SN06AD

DEVICE SPECIFICATION apQ84SN06A 60V/84A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =12m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =50.4A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

Detailed specifications: APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A, APQ65SN06AD, APQ65SN06AH, APQ84SN06A, SPP20N60C3, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, CEB30N3, CED05N8, CED5175

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