APQ84SN06AH MOSFET PDF: N-Ch, 60V, 84A. Datasheet. Full specification with pinout and replacement list

APQ84SN06AH Specs and Replacement

   Type Designator: APQ84SN06AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 687 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-220

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APQ84SN06AH datasheet

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DEVICE SPECIFICATION APQ84SN06AH 60V/84A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A effect transistors are produced using planar stripe, RDS(on) =9m (typ) VGS =10V, ID =42A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒

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DEVICE SPECIFICATION apQ84SN06A 60V/84A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 84A, RDS(on) =12m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =50.4A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta... See More ⇒

Detailed specifications: APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH , APQ84SN06A , APQ84SN06AD , SKD502T , APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 , CEB30N3 , CED05N8 , CED5175 , CED6042 .