All MOSFET. CED5175 Datasheet

 

CED5175 Datasheet and Replacement


   Type Designator: CED5175
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-251
 

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CED5175 Datasheet (PDF)

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CED5175

CED5175/CEU5175P-Channel Enhancement Mode Field Effect TransistorFEATURES-55V, -40A, RDS(ON) = 23m @VGS = -10V. RDS(ON) = 28m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUT

Datasheet: APQ84SN06AD , APQ84SN06AH , APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 , CEB30N3 , CED05N8 , AON7506 , CED6042 , CEDM7001 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 .

History: HY18N20T | SI7476DP | HFD2N65S | NDB610AE | TMP120N08A | 2SK869 | MTC3588N6

Keywords - CED5175 MOSFET datasheet

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