CED5175 Specs and Replacement

Type Designator: CED5175

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-251

CED5175 substitution

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CED5175 datasheet

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 ced5175 ceu5175.pdf pdf_icon

CED5175

CED5175/CEU5175 P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V, -40A, RDS(ON) = 23m @VGS = -10V. RDS(ON) = 28m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUT... See More ⇒

Detailed specifications: APQ84SN06AD, APQ84SN06AH, APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, CEB30N3, CED05N8, IRFB3607, CED6042, CEDM7001, CEDM7001E, CEDM7001VL, CEDM7002AE, CEDM7004, CEDM7004VL, CEDM8001

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.