IRFS740A Specs and Replacement

Type Designator: IRFS740A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO220F

IRFS740A substitution

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IRFS740A datasheet

 ..1. Size:931K  samsung
irfs740a.pdf pdf_icon

IRFS740A

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

 7.2. Size:276K  1
irfs740 irfs741.pdf pdf_icon

IRFS740A

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 7.3. Size:924K  fairchild semi
irf740b irfs740b.pdf pdf_icon

IRFS740A

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Detailed specifications: IRFS722, IRFS723, IRFS730, IRFS730A, IRFS731, IRFS732, IRFS733, IRFS740, 8N60, IRFS741, IRFS742, IRFS743, IRFS750A, IRFS820, IRFS820A, IRFS821, IRFS822

Keywords - IRFS740A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.