All MOSFET. CEDM7001E Datasheet

 

CEDM7001E MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEDM7001E
   Marking Code: E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT-883L

 CEDM7001E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEDM7001E Datasheet (PDF)

 ..1. Size:219K  central
 cedm7001e.pdf

CEDM7001E CEDM7001E

TMCEDM7001ECentralSemiconductor Corp.SURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001E is anSILICON MOSFETEnhancement-mode N-Channel Field Effect Transistor,manufactured by the N-Channel DMOS Process, designed forhigh speed pulsed amplifier and driver applications.This MOSFET offers Low rDS(on) and Low Theshold Voltage.FEATURES:

 6.1. Size:358K  central
 cedm7001.pdf

CEDM7001E CEDM7001E

CEDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: HFEATURES:

 6.2. Size:972K  central
 cedm7001vl.pdf

CEDM7001E CEDM7001E

CEDM7001VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001VL is anMOSFETN-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET of

 7.1. Size:1044K  central
 cedm7004vl.pdf

CEDM7001E CEDM7001E

CEDM7004VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004VL is anMOSFETN-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: SCOMPLEMENTARY P-CHA

 7.2. Size:1035K  central
 cedm7004.pdf

CEDM7001E CEDM7001E

CEDM7004SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004 SILICON MOSFETis an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Threshold Voltage.MARKING CODE: SFEA

 7.3. Size:805K  central
 cedm7002ae.pdf

CEDM7001E CEDM7001E

CEDM7002AEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNT SILICONN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7002AE MOSFETis a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for high speed pulsed amplifier and driver applications.MARKING CODE: 7SOT-883L CASEAPPLICATIONS: FEATURES:Load/Power switc

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CHM3K33VESGP | BUZ80 | BRCS080N02RA | KI4511DY | STB4N62K3 | CTP06N6P8

 

 
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