All MOSFET. CEDM7001VL Datasheet

 

CEDM7001VL Datasheet and Replacement


   Type Designator: CEDM7001VL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 9.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SOT-883VL
 

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CEDM7001VL Datasheet (PDF)

 ..1. Size:972K  central
 cedm7001vl.pdf pdf_icon

CEDM7001VL

CEDM7001VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001VL is anMOSFETN-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET of

 6.1. Size:358K  central
 cedm7001.pdf pdf_icon

CEDM7001VL

CEDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: HFEATURES:

 6.2. Size:219K  central
 cedm7001e.pdf pdf_icon

CEDM7001VL

TMCEDM7001ECentralSemiconductor Corp.SURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001E is anSILICON MOSFETEnhancement-mode N-Channel Field Effect Transistor,manufactured by the N-Channel DMOS Process, designed forhigh speed pulsed amplifier and driver applications.This MOSFET offers Low rDS(on) and Low Theshold Voltage.FEATURES:

 7.1. Size:1044K  central
 cedm7004vl.pdf pdf_icon

CEDM7001VL

CEDM7004VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004VL is anMOSFETN-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: SCOMPLEMENTARY P-CHA

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Datasheet: CEB110P03 , CEB18N5 , CEB30N3 , CED05N8 , CED5175 , CED6042 , CEDM7001 , CEDM7001E , IRFP450 , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 , CEDM8004VL , CEEF02N65G .

History: FTK2N65P

Keywords - CEDM7001VL MOSFET datasheet

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